PD- 91577B IRG4PH40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag.
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.74V
@VGE = 15V, IC = 15A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized rec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4PH40K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4PH40KDPBF |
International Rectifier |
INSUALATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4PH40KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4PH40S |
International Rectifier |
Standard Speed IGBT | |
5 | IRG4PH40U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4PH40UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4PH40UD2 |
IRF |
Insulated Gate Bipolar Transistor | |
8 | IRG4PH40UD2-E |
IRF |
Insulated Gate Bipolar Transistor | |
9 | IRG4PH40UD2-EP |
IRF |
Insulated Gate Bipolar Transistor | |
10 | IRG4PH40UD2PBF |
IRF |
Insulated Gate Bipolar Transistor | |
11 | IRG4PH40UDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4PH40UPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |