IRG4PC50SDPBF - International Rectifier

IRG4PC50SDPBF INSULATED GATE BIPOLAR TRANSISTOR

PD - 97316 IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Standard Speed Co.

Features

C VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Benefits n-channel • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing C E C G TO-247AC G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector .