PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. =.
• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4PC50F-EPBF |
International Rectifier |
Fast Speed IGBT | |
2 | IRG4PC50FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4PC50FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4PC50FPBF |
International Rectifier |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4PC50K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4PC50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4PC50KDPBF |
International Rectifier |
UltraFast IGBT | |
8 | IRG4PC50KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4PC50S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4PC50SDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4PC50SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4PC50U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |