PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficienc.
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
VCES = 600V
G E
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
n-channel
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
• Latest generation 4 IGBTs offer highest power density motor controls possible.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4PC50F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4PC50F-EPBF |
International Rectifier |
Fast Speed IGBT | |
3 | IRG4PC50FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4PC50FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4PC50FPBF |
International Rectifier |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4PC50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4PC50KDPBF |
International Rectifier |
UltraFast IGBT | |
8 | IRG4PC50KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4PC50S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4PC50SDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4PC50SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4PC50U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |