IRG4PC40UDPBF - International Rectifier

IRG4PC40UDPBF INSULATED GATE BIPOLAR TRANSISTOR

PD - 94937 IRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafas.

Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free Benefits
• Generation -4 IGBT’s offer highest efficiencies available
• IGBT’s optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT’s. Minimized recovery characteristics req.