PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600.
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency than Generation 3
• Industry standard TO-247AC package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 25A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4PC40F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4PC40FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4PC40FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4PC40FPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4PC40KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4PC40KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4PC40KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4PC40S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4PC40SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4PC40U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4PC40UD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4PC40UDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |