PD 91466E IRG4PC40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VC.
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Paramet.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4PC40F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4PC40FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4PC40FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4PC40FPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4PC40K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4PC40KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4PC40KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4PC40KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4PC40S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4PC40SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4PC40UD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4PC40UDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |