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IRFZ48N |
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| Part Number | IRFZ48N |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
ous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
PD - 94991B
IRFZ48NPbF
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 14mΩ
ID = 64A
S
TO-220AB
Max. 64 45 210 130 0.83 ± 20 32 13 5.0
-55 to + 175
300 (1.6... |
| Document |
 IRFZ48N Data Sheet
PDF 235.66KB |
| Distributor | Stock | Price | Buy |
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