Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )
* T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFW620B |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | IRFW624A |
Fairchild Semiconductor |
Power MOSFET | |
3 | IRFW624B |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | IRFW610A |
Samsung |
Power MOSFET | |
5 | IRFW610B |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | IRFW614A |
Fairchild Semiconductor |
Power MOSFET | |
7 | IRFW614B |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | IRFW630A |
Samsung |
Power MOSFET | |
9 | IRFW630B |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | IRFW630B |
ON Semiconductor |
N-Channel MOSFET | |
11 | IRFW634A |
Fairchild Semiconductor |
Power MOSFET | |
12 | IRFW634B |
Fairchild Semiconductor |
N-Channel MOSFET |