$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Character.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFW614B |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | IRFW610A |
Samsung |
Power MOSFET | |
3 | IRFW610B |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | IRFW620A |
Fairchild Semiconductor |
Power MOSFET | |
5 | IRFW620B |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | IRFW624A |
Fairchild Semiconductor |
Power MOSFET | |
7 | IRFW624B |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | IRFW630A |
Samsung |
Power MOSFET | |
9 | IRFW630B |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | IRFW630B |
ON Semiconductor |
N-Channel MOSFET | |
11 | IRFW634A |
Fairchild Semiconductor |
Power MOSFET | |
12 | IRFW634B |
Fairchild Semiconductor |
N-Channel MOSFET |