These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G S
D2-PAK
IRFW Series
G D S
I2-PAK
IRFI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFW614B / IRFI614B 250 2.8 1.8 8.5 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFW614A |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRFW610A |
Samsung |
Power MOSFET | |
3 | IRFW610B |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | IRFW620A |
Fairchild Semiconductor |
Power MOSFET | |
5 | IRFW620B |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | IRFW624A |
Fairchild Semiconductor |
Power MOSFET | |
7 | IRFW624B |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | IRFW630A |
Samsung |
Power MOSFET | |
9 | IRFW630B |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | IRFW630B |
ON Semiconductor |
N-Channel MOSFET | |
11 | IRFW634A |
Fairchild Semiconductor |
Power MOSFET | |
12 | IRFW634B |
Fairchild Semiconductor |
N-Channel MOSFET |