IRFU430B - Fairchild Semiconductor

IRFU430B 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.

Features

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• 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
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● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! DataShee DataSheet4U.com ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR430B / IRFU430B 500 3.5 2.2 14 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V.