This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for us.
l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 5.5mΩ G S ID = 42A Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFU4104 |
International Rectifier |
Power MOSFET | |
2 | IRFU4104 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFU410 |
Intersil |
1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs | |
4 | IRFU410 |
Intersil Corporation |
N-Channel Power MOSFETs | |
5 | IRFU4105 |
INCHANGE |
N-Channel MOSFET | |
6 | IRFU4105 |
International Rectifier |
Power MOSFET | |
7 | IRFU4105PBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFU4105Z |
International Rectifier |
Power MOSFET | |
9 | IRFU4105Z |
INCHANGE |
N-Channel MOSFET | |
10 | IRFU4105ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET | |
11 | IRFU410A |
Fairchild |
Advanced Power MOSFET | |
12 | IRFU410B |
Fairchild |
500V N-Channel MOSFET |