IRFU410 - Intersil Corporation

IRFU410 N-Channel Power MOSFETs

www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Al.

Features

• 1.5A, 500V
• rDS(ON) = 7.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFU410 IRFR410 PACKAGE TO-251AA TO-252AA BRAND IFU410 IFR410 Symbol D NOTE: When ordering, use the entire part number. G S ee DataSh DataSheet4U.com Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) DataSheet4U.com 4-401 C.