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iscN-Channel MOSFET Transistor IRFU1N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.
·Low drain-source on-resistance:
RDS(ON) =7Ω (MAX)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
1.4
A
IDM
Drain Current-Single Pulsed
5.6
A
PD
Total Dissipation @TC=25℃
36
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55.
IRFU1N60A - International Rectifier
PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Co.
IRFU1N60A - Vishay Siliconix
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) R.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFU1N60APBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRFU1010Z |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 3 | IRFU1010Z |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFU1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 5 | IRFU1018E |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFU1018EPbF |
International Rectifier |
Power MOSFET |
|
| 7 | IRFU110 |
Intersil Corporation |
N-Channel Power MOSFETs |
|
| 8 | IRFU110 |
Vishay Siliconix |
Power MOSFET |
|
| 9 | IRFU110 |
Fairchild Semiconductor |
N-Channel Power MOSFETs |
|
| 10 | IRFU110 |
International Rectifier |
Power MOSFET |
|
| 11 | IRFU110A |
Samsung |
Power MOSFET |
|
| 12 | IRFU120 |
International Rectifier |
POWER MOSFET |
|