Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such .
• 4.7A, 100V
• rDS(ON) = 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFR110, IRFU110 Rev. B
IRFR110, IRFU110
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to So.
IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Cha.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFU110A |
Samsung |
Power MOSFET | |
2 | IRFU1010Z |
International Rectifier |
AUTOMOTIVE MOSFET | |
3 | IRFU1010Z |
INCHANGE |
N-Channel MOSFET | |
4 | IRFU1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET | |
5 | IRFU1018E |
INCHANGE |
N-Channel MOSFET | |
6 | IRFU1018EPbF |
International Rectifier |
Power MOSFET | |
7 | IRFU120 |
International Rectifier |
POWER MOSFET | |
8 | IRFU120 |
Intersil Corporation |
N-Channel Power MOSFETs | |
9 | IRFU120 |
Vishay Siliconix |
Power MOSFET | |
10 | IRFU120 |
INCHANGE |
N-Channel MOSFET | |
11 | IRFU1205 |
International Rectifier |
Power MOSFET | |
12 | IRFU1205 |
INCHANGE |
N-Channel MOSFET |