isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
·With TO-251(IPAK) packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
79
IDM
Drain Current-Single Pulsed
315
PD
Total Dissipation
110
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARAC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFU1018EPbF |
International Rectifier |
Power MOSFET | |
2 | IRFU1010Z |
International Rectifier |
AUTOMOTIVE MOSFET | |
3 | IRFU1010Z |
INCHANGE |
N-Channel MOSFET | |
4 | IRFU1010ZPBF |
International Rectifier |
AUTOMOTIVE MOSFET | |
5 | IRFU110 |
Intersil Corporation |
N-Channel Power MOSFETs | |
6 | IRFU110 |
Vishay Siliconix |
Power MOSFET | |
7 | IRFU110 |
Fairchild Semiconductor |
N-Channel Power MOSFETs | |
8 | IRFU110 |
International Rectifier |
Power MOSFET | |
9 | IRFU110A |
Samsung |
Power MOSFET | |
10 | IRFU120 |
International Rectifier |
POWER MOSFET | |
11 | IRFU120 |
Intersil Corporation |
N-Channel Power MOSFETs | |
12 | IRFU120 |
Vishay Siliconix |
Power MOSFET |