IRFSL4620PBF - International Rectifier

IRFSL4620PBF N-Channel HEXFET Power MOSFET

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body d.

Features

mperature, for 10 seconds (1.6mm from case) c e °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d c i 113 See Fig. 14, 15, 22a, 22b, mJ A mJ Thermal Resistance Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) j Parameter Typ.
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  – Max. 1.045 40 Units °C/W www.irf.com 1 12/18/08 IRFS/SL4620PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG(int) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Te.