isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous;Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
±20
270 191
1080
PD
Total Dissipation
375
Tj
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFS3004 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFS3004-7PPbF |
International Rectifier |
Power MOSFET | |
3 | IRFS3004PBF |
International Rectifier |
Power MOSFET | |
4 | IRFS3006-7PPbF |
International Rectifier |
Power MOSFET | |
5 | IRFS3006PbF |
International Rectifier |
Power MOSFET | |
6 | IRFS3107-7PPBF |
International Rectifier |
Power MOSFET | |
7 | IRFS3107PbF |
International Rectifier |
Power MOSFET | |
8 | IRFS3107PbF |
INCHANGE |
N-Channel MOSFET | |
9 | IRFS31N20D |
IRF |
Power MOSFET | |
10 | IRFS31N20D |
INCHANGE |
N-Channel MOSFET | |
11 | IRFS31N20DPBF |
International Rectifier |
Power MOSFET | |
12 | IRFS3206 |
INCHANGE |
N-Channel MOSFET |