IRFR3710ZPbF - Infineon

IRFR3710ZPbF Power MOSFET

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for us.

Features

 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Multiple Package Options
 Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine t.