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isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage .
·Static drain-source on-resistance:
RDS(on)≤18mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
56
IDM
Drain Current-Single Pulsed
220
PD
Total Dissipation @TC=25℃
140
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channe.
IRFR3710Z - International Rectifier
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFR3710ZPbF |
Infineon |
Power MOSFET |
|
| 2 | IRFR3710ZPBF |
International Rectifier |
Automotive MOSFET |
|
| 3 | IRFR3711 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFR3711 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFR3711PbF |
International Rectifier |
SMPS MOSFET |
|
| 6 | IRFR3711Z |
International Rectifier |
HEXFET Power MOSFET |
|
| 7 | IRFR3711Z |
Freescale |
N-Channel MOSFET |
|
| 8 | IRFR3711Z |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IRFR3711ZCPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRFR3711ZPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 11 | IRFR3704 |
International Rectifier |
Power MOSFET |
|
| 12 | IRFR3704PBF |
International Rectifier |
HEXFET Power MOSFET |
|