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IRFR3710ZPbF |
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| Part Number | IRFR3710ZPbF |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu... |
| Features |
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine t... |
| Document |
 IRFR3710ZPbF Data Sheet
PDF 665.64KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFR3710ZPBF |
International Rectifier |
Automotive MOSFET |
|
| 2 | IRFR3710Z |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 3 | IRFR3710Z |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFR3711 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFR3711 |
INCHANGE |
N-Channel MOSFET |
|