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IRFR3710Z |
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| Part Number | IRFR3710Z |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 100V
G S
RDS(on) = 18mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable ... |
| Document |
 IRFR3710Z Data Sheet
PDF 214.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFR3710Z |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IRFR3710ZPbF |
Infineon |
Power MOSFET |
|
| 3 | IRFR3710ZPBF |
International Rectifier |
Automotive MOSFET |
|
| 4 | IRFR3711 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFR3711 |
INCHANGE |
N-Channel MOSFET |
|