Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applica.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224, SiHFR224)
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version .
iscN-Channel MOSFET Transistor IRFR224 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement .
$GYDQFHG 3RZHU 026)(7 IRFR224 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFR220 |
Intersil Corporation |
N-Channel Power MOSFETs | |
2 | IRFR220 |
Vishay Siliconix |
Power MOSFET | |
3 | IRFR220 |
International Rectifier |
Power MOSFET | |
4 | IRFR220 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFR220A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
6 | IRFR220B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
7 | IRFR220B |
ON Semiconductor |
200V N-Channel MOSFET | |
8 | IRFR220N |
International Rectifier |
Power MOSFET | |
9 | IRFR220N |
INCHANGE |
N-Channel MOSFET | |
10 | IRFR220NPBF |
International Rectifier |
Power MOSFET | |
11 | IRFR220PBF |
International Rectifier |
HEXFEP Power MOSFET | |
12 | IRFR224A |
Samsung |
Power MOSFET |