www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain .
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFR220 |
Intersil Corporation |
N-Channel Power MOSFETs | |
2 | IRFR220 |
Vishay Siliconix |
Power MOSFET | |
3 | IRFR220 |
International Rectifier |
Power MOSFET | |
4 | IRFR220 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFR220B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | IRFR220B |
ON Semiconductor |
200V N-Channel MOSFET | |
7 | IRFR220N |
International Rectifier |
Power MOSFET | |
8 | IRFR220N |
INCHANGE |
N-Channel MOSFET | |
9 | IRFR220NPBF |
International Rectifier |
Power MOSFET | |
10 | IRFR220PBF |
International Rectifier |
HEXFEP Power MOSFET | |
11 | IRFR224 |
Fairchild Semiconductor |
Power MOSFET | |
12 | IRFR224 |
International Rectifier |
Power MOSFET |