IRFR024NPBF - INCHANGE

IRFR024NPBF N-Channel MOSFET

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRFR024NPBF ·FEATURES ·Drain Current ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) =75mΩ(Max)@VGS=10V ·High density cell design for ultra low Rdson ·Fully characterized avalanche voltage and current ·Minimum Lot-to-Lot variations for robust device p.

Features

·Drain Current ID=17A@ TC=25℃
·Drain Source Voltage- : VDSS= 55V(Min)
·Static Drain-Source On-Resistance : RDS(on) =75mΩ(Max)@VGS=10V
·High density cell design for ultra low Rdson
·Fully characterized avalanche voltage and current
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Power switching application
·Hard switched and high frequency circuits
·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuou.