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isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55.
·Static drain-source on-resistance:
RDS(on)≤75mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
17
IDM
Drain Current-Single Pulsed
68
PD
Total Dissipation @TC=25℃
45
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-.
IRFR024N - IRF
• Lead-Free PD - 95066A IRFR024NPbF IRFU024NPbF www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFR024 |
International Rectifier |
HEXFET POWER MOSFET |
|
| 2 | IRFR024 |
Vishay Siliconix |
Power MOSFET |
|
| 3 | IRFR024A |
Samsung |
Power MOSFET |
|
| 4 | IRFR024NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRFR024NPBF |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFR024PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 7 | IRFR020 |
International Rectifier |
HEXFETR Power MOSFET |
|
| 8 | IRFR020 |
Vishay Siliconix |
(IRFR020 / IRFU020) Power MOSFET |
|
| 9 | IRFR010 |
IRF |
Transistors |
|
| 10 | IRFR010 |
Vishay |
Power MOSFET |
|
| 11 | IRFR012 |
International Rectifier |
Transistor |
|
| 12 | IRFR014 |
Vishay |
Power MOSFET |
|