PD- 97064 IRFR020 HEXFET® Power MOSFET www.DataSheet4U.com Dynamic dv/dt Rating Surface Mount (IRFR020) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements D G D S D-Pak IRFR020 Absolute Maximum Ratings G D S Gate Drain Source www.irf.com 1 11/16/05 IRFR020 www.DataSheet4U.com 2 www.irf.com I.
B 6.45 (.245) 5.68 (.224) 10.42 (.410) 9.40 (.370) 0.51 (.020) MIN. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.58 (.023) 0.46 (.018) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" N ote: "P" in ass embly line pos ition indicates "Lead-Free" I.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFR024 |
International Rectifier |
HEXFET POWER MOSFET | |
2 | IRFR024 |
Vishay Siliconix |
Power MOSFET | |
3 | IRFR024A |
Samsung |
Power MOSFET | |
4 | IRFR024N |
IRF |
Power MOSFET | |
5 | IRFR024N |
INCHANGE |
N-Channel MOSFET | |
6 | IRFR024NPBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRFR024NPBF |
INCHANGE |
N-Channel MOSFET | |
8 | IRFR024PBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRFR010 |
IRF |
Transistors | |
10 | IRFR010 |
Vishay |
Power MOSFET | |
11 | IRFR012 |
International Rectifier |
Transistor | |
12 | IRFR014 |
Vishay |
Power MOSFET |