IRFP450FI - STMicroelectronics

IRFP450FI N-Channel MOSFET

IRFP450/FI IRFW450 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14 A 9A 14 A TO-247 TYPICAL RDS(on) = 0.33 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 2 1 APPLICATIONS s HIGH CURRENT, H.

Features

ion Temperature o Value IRFP450FI 500 500 ± 20 14 8.8 56 180 1.44  -65 to 150 150 9 5.6 56 70 0.56 4000 500 500 Unit V V V A A A W W/ o C V o o C C (
•) Pulse width limited by safe operating area July 1993 1/10 Free Datasheet http://www.0PDF.com IRFP450/FI - IRFW450 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 0.69 30 0.1 300 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA.