These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V Low gate charge ( typical 87 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3P
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IRFP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRFP450B 500 14 8.8 56 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP450 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFP450 |
International Rectifier |
Power MOSFET | |
3 | IRFP450 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRFP450 |
ST Microelectronics |
N-Channel Power MOSFET | |
5 | IRFP450 |
Vishay |
Power MOSFET | |
6 | IRFP450 |
IXYS |
Standard Power MOSFET | |
7 | IRFP450 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
8 | IRFP450A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | IRFP450A |
International Rectifier |
Power MOSFET | |
10 | IRFP450A |
Vishay Siliconix |
Power MOSFET | |
11 | IRFP450APBF |
International Rectifier |
Power MOSFET | |
12 | IRFP450FI |
STMicroelectronics |
N-Channel MOSFET |