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iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.
·Low drain-source on-resistance:
RDS(ON) =0.235Ω (MAX)
·Enhancement mode:
Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Pulsed
92
A
PD
Total Dissipation @TC=25℃
370
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
.
IRFP23N50L - International Rectifier
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (.
IRFP23N50L - Vishay
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP21N60L |
Vishay |
Power MOSFET |
|
| 2 | IRFP21N60L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFP22N50A |
Vishay |
Power MOSFET |
|
| 4 | IRFP22N50A |
International Rectifier |
SMPS MOSFET |
|
| 5 | IRFP22N50A |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFP22N50APBF |
IRF |
Power MOSFET |
|
| 7 | IRFP22N60K |
International Rectifier |
SMPS MOSFET |
|
| 8 | IRFP22N60K |
Vishay |
Power MOSFET |
|
| 9 | IRFP22N60K |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IRFP22N60KPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 11 | IRFP240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | IRFP240 |
International Rectifier |
Power MOSFET |
|