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Data Sheet January 2002 IRFP240 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su.
• 20A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• .
IRFP240 - Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
IRFP240 - Vishay Siliconix
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .
IRFP240 - Intersil Corporation
IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP240A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFP240A |
Samsung |
Power MOSFET |
|
| 3 | IRFP240B |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | IRFP240FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRFP240PbF |
Vishay Siliconix |
Power MOSFET |
|
| 6 | IRFP240PBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRFP240R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRFP2410 |
International Rectifier |
Fourth Generation MOSFET |
|
| 9 | IRFP241R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRFP242R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | IRFP243R |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | IRFP244 |
Vishay |
Power MOSFET |
|
