IRFP23N50L |
Part Number | IRFP23N50L |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimu... |
Features |
·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pulsed 92 A PD Total Dissipation @TC=25℃ 370 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature ... |
Document |
IRFP23N50L Data Sheet
PDF 395.36KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP23N50L |
International Rectifier |
SMPS MOSFET | |
2 | IRFP23N50L |
Vishay |
Power MOSFET | |
3 | IRFP21N60L |
Vishay |
Power MOSFET | |
4 | IRFP21N60L |
INCHANGE |
N-Channel MOSFET | |
5 | IRFP22N50A |
Vishay |
Power MOSFET |