IRFD9110 Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for.
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
Ordering Information
PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110
G
S
NOTE: When ordering, use the entire part number.
Packaging
HEXDIP
DRAIN GATE SOURCE
4-39
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFD9110
Absolute Maximum Ratings
TC = 25.
IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFD9110PbF |
International Rectifier |
Power MOSFET | |
2 | IRFD9113 |
Harris |
(IRFD9110) P Channel Power MOSFET | |
3 | IRFD9113 |
IRF |
(IRFD9110) P Channel Power MOSFET | |
4 | IRFD9120 |
TEMIC |
P-Channel MOSFET | |
5 | IRFD9120 |
Intersil Corporation |
P-Channel Power MOSFET | |
6 | IRFD9120 |
International Rectifier |
Power MOSFET | |
7 | IRFD9120 |
Vishay |
Power MOSFET | |
8 | IRFD9120PbF |
International Rectifier |
Power MOSFET | |
9 | IRFD9123 |
TEMIC |
P-Channel MOSFET | |
10 | IRFD9123 |
ETC |
Avalanche Energy Rated P-Channel Power MOSFET | |
11 | IRFD9014 |
International Rectifier |
Power MOSFET | |
12 | IRFD9020 |
Vishay |
Power MOSFET |