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IRFD9110 |
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| Part Number | IRFD9110 |
| Manufacturer | Intersil Corporation |
| Description | IRFD9110 Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de... |
| Features |
• 0.7A, 100V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-39 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9110 Absolute Maximum Ratings TC = 25... |
| Document |
 IRFD9110 Data Sheet
PDF 54.39KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFD9110 |
International Rectifier |
Power MOSFET |
|
| 2 | IRFD9110 |
Fairchild Semiconductor |
P-Channel Power MOSFET |
|
| 3 | IRFD9110PbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRFD9113 |
Harris |
(IRFD9110) P Channel Power MOSFET |
|
| 5 | IRFD9113 |
IRF |
(IRFD9110) P Channel Power MOSFET |
|