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IRFD9110 |
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| Part Number | IRFD9110 |
| Manufacturer | Fairchild Semiconductor |
| Description | IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, ... |
| Features |
• 0.7A, 100V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE ©2002 Fairchild Semiconductor Corporation IRFD9110 Rev. B IRFD9110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD9110 -100 -100 -0.7 -3.0 ±20 1.0 0.008 190 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC ... |
| Document |
 IRFD9110 Data Sheet
PDF 93.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFD9110 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 2 | IRFD9110 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFD9110PbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRFD9113 |
Harris |
(IRFD9110) P Channel Power MOSFET |
|
| 5 | IRFD9113 |
IRF |
(IRFD9110) P Channel Power MOSFET |
|