Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min. 0.180Ω Max. 2.3V Min., 4.0V Max. 25µA Max. ± 10µA Max. 125°C Max. Test Conditions VGS = 0V, ID = 100µA VGS = 10V, ID = 10A VDS = VG.
0 Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° ) 99% Al, 1% Si (0.004 mm) 0.147" x 0.201" ( 3.73mm x 5.11 mm) 125mm with 100 flat 0.375mm + / -0.020mm 01-5331 0.084 mm 0.51mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 3/23/99 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFC250 |
IXYS Corporation |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series |
|
| 2 | IRFC2907B |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRFC150 |
IXYS Corporation |
High Voltage Power MOSFET |
|
| 4 | IRFC350 |
IXYS Corporation |
N-Channel MOSFET |
|
| 5 | IRFC450 |
IXYS Corporation |
HIGH VOLTAGE POWER MOSFET |
|
| 6 | IRFC9110 |
IRF |
P-Channel Power MOSFET |
|
| 7 | IRFC9110 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 8 | IRF-24 |
Vishay |
Inductors |
|
| 9 | IRF-46 |
Vishay Siliconix |
Inductors Epoxy Conformal Coated |
|
| 10 | IRF034 |
International Rectifier |
MOSFET transistor |
|
| 11 | IRF034 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | IRF044 |
Seme LAB |
N-CHANNEL POWER MOSFET |
|