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www.vishay.com IRFBC40A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 1.2 42 10 20 Single FEATURES • Low gate charge Qg results in simple drive Requirement • Improved gate, avalanche and dynamic dV/dt ruggedness Available Ava.
• Low gate charge Qg results in simple drive Requirement
• Improved gate, avalanche and dynamic dV/dt ruggedness
Available Available
• Fully characterized capacitance and avalanche voltage and current
• Effective Coss specified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
APPLICATIONS .
IRFBC40A - International Rectifier
PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptab.
IRFBC40A - INCHANGE
iscN-Channel MOSFET Transistor IRFBC40A ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFBC40 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | IRFBC40 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRFBC40 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFBC40 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRFBC40 |
Vishay |
Power MOSFET |
|
| 6 | IRFBC40 |
Harris |
N-Channel Power MOSFETs |
|
| 7 | IRFBC40 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRFBC40APBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRFBC40AS |
International Rectifier |
Power MOSFET |
|
| 10 | IRFBC40AS |
Vishay |
Power MOSFET |
|
| 11 | IRFBC40AS |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IRFBC40L |
International Rectifier |
Power MOSFET |
|