Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche..
of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO247 package. The combination of extremely low on-resistance silicon and the Super-220 TM package makes it ideal to reduce the component count in multiparalled TO-220 appl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFBA1404 |
International Rectifier |
Power MOSFET | |
2 | IRFBA1404PPBF |
International Rectifier |
Power MOSFET | |
3 | IRFBA1405 |
International Rectifier |
Power MOSFET | |
4 | IRFBA1405P |
International Rectifier |
AUTOMOTIVE MOSFET | |
5 | IRFBA1405PPBF |
International Rectifier |
Power MOSFET | |
6 | IRFBA22N50 |
International Rectifier |
Power MOSFET | |
7 | IRFBA22N50A |
International Rectifier |
Power MOSFET | |
8 | IRFBA22N50APBF |
International Rectifier |
POWER MOSFET | |
9 | IRFBA31N50L |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRFBA32N50K |
International Rectifier |
Power MOSFET | |
11 | IRFBA34N50C |
International Rectifier |
Power MOSFET | |
12 | IRFBA90N20 |
International Rectifier |
Power MOSFET |