Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in a.
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest pos.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF9520 |
Intersil Corporation |
P-Channel Power MOSFET | |
2 | IRF9520 |
Vishay |
Power MOSFET | |
3 | IRF9520N |
International Rectifier |
Power MOSFET | |
4 | IRF9520NL |
International Rectifier |
Power MOSFET | |
5 | IRF9520NPBF |
International Rectifier |
HEXFET POWER MOSFET | |
6 | IRF9520NS |
International Rectifier |
Power MOSFET | |
7 | IRF9520NSPBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRF9521 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FET | |
9 | IRF9522 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FET | |
10 | IRF9523 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FET | |
11 | IRF9510 |
Vishay |
Power MOSFET | |
12 | IRF9510 |
Intersil Corporation |
P-Channel Power MOSFET |