Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package.
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• P-channel
• 175 °C operating temperature
Available
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION Third generation power MOSFETs from Vishay.
IRF9510 Data Sheet July 1999 File Number 2214.4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancemen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF9510S |
International Rectifier |
Power MOSFET | |
2 | IRF9510S |
Vishay |
Power MOSFET | |
3 | IRF9511 |
ETC |
P-Channel Power MOSFET | |
4 | IRF9512 |
ETC |
P-Channel Power MOSFET | |
5 | IRF9513 |
ETC |
P-Channel Power MOSFET | |
6 | IRF9520 |
Intersil Corporation |
P-Channel Power MOSFET | |
7 | IRF9520 |
Vishay |
Power MOSFET | |
8 | IRF9520N |
International Rectifier |
Power MOSFET | |
9 | IRF9520NL |
International Rectifier |
Power MOSFET | |
10 | IRF9520NPBF |
International Rectifier |
HEXFET POWER MOSFET | |
11 | IRF9520NS |
International Rectifier |
Power MOSFET | |
12 | IRF9520NSPBF |
International Rectifier |
HEXFET Power MOSFET |