l l D VDSS = -100V RDS(on) = 0.48Ω G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with .
ipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile applications. D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and St.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF9520N |
International Rectifier |
Power MOSFET | |
2 | IRF9520NPBF |
International Rectifier |
HEXFET POWER MOSFET | |
3 | IRF9520NS |
International Rectifier |
Power MOSFET | |
4 | IRF9520NSPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF9520 |
Intersil Corporation |
P-Channel Power MOSFET | |
6 | IRF9520 |
Vishay |
Power MOSFET | |
7 | IRF9520S |
Vishay |
Power MOSFET | |
8 | IRF9521 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FET | |
9 | IRF9522 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FET | |
10 | IRF9523 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FET | |
11 | IRF9510 |
Vishay |
Power MOSFET | |
12 | IRF9510 |
Intersil Corporation |
P-Channel Power MOSFET |