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• Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12/10/03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF www.irf.com 5 IRF830PbF 6 www.irf.com IRF830PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (..
SINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB LY L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y LOT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact i.
IRF830PBF - Thinki Semiconductor
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS te.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF830P-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | IRF830 |
NXP |
PowerMOS transistor |
|
| 3 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 4 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET |
|
| 5 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 6 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF830 |
International Rectifier |
Power MOSFET |
|
| 8 | IRF830 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors |
|
| 9 | IRF830 |
Vishay |
Power MOSFET |
|
| 10 | IRF830 |
ON Semiconductor |
Power Field Effect Transistor |
|
| 11 | IRF830 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 12 | IRF830 |
nELL |
N-Channel Power MOSFET |
|