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IRF830PBF |
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| Part Number | IRF830PBF |
| Manufacturer | Thinki Semiconductor |
| Description | This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially design... |
| Features |
̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested
1. Gate {
{ 2. Drain
̻
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{ 3. Source
BVDSS = 500V RDS(ON) = 1.5 ohm ID = 5.0A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO... |
| Document |
 IRF830PBF Data Sheet
PDF 1.18MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF830PBF |
International Rectifier |
POWER MOSFET |
|
| 2 | IRF830P-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | IRF830 |
NXP |
PowerMOS transistor |
|
| 4 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET |
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| 5 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET |
|