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IRF820B |
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| Part Number | IRF820B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF820B 500 2.5 1.6 8.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS820B 2.5 * 1.6 * 8.0 * 200 2.5 4.9 5.5 Units V A ... |
| Document |
 IRF820B Data Sheet
PDF 858.43KB |
| Distributor | Stock | Price | Buy |
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