IRF7402 - International Rectifier

IRF7402 HEXFET Power MOSFET

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable devic.

Features

e. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 6.8 5.4 54 2.5 1.6 0.02 ± 12 5.0 -55 to .