IRF7401PBF - International Rectifier

IRF7401PBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide v.

Features

unt application. PD - 95724 IRF7401PbF HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS = 20V RDS(on) = 0.022Ω SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 10 8.7 7.0 35 2.5 0.02 ± 12 5.0 -55 to + 150 Units A W W/°C V V/ns °C.