Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide v.
or phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 10 8.7 7.0 35 2.5 0.02 ± 12 5.0 -55 to + 150 Units A W W/°C .
The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a lase.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF740 |
International Rectifier |
Power MOSFET | |
2 | IRF740 |
STMicroelectronics |
N-channel MOSFET | |
3 | IRF740 |
Vishay |
Power MOSFET | |
4 | IRF740 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | IRF7401PBF |
International Rectifier |
Power MOSFET | |
6 | IRF7401PBF-1 |
International Rectifier |
Power MOSFET | |
7 | IRF7402 |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRF7402PBF |
International Rectifier |
Power MOSFET | |
9 | IRF7403 |
International Rectifier |
Power MOSFET | |
10 | IRF7403PBF |
International Rectifier |
Power MOSFET | |
11 | IRF7404 |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRF7404 |
Analog Devices |
Thermoelectric Cooler Controller |