The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment a.
cations, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF6616 |
International Rectifier |
DirectFET Power MOSFET | |
2 | IRF6616PBF |
International Rectifier |
Power MOSFET | |
3 | IRF6610 |
International Rectifier |
HEXFET Power MOSFET Silicon Technology | |
4 | IRF6611 |
International Rectifier |
DirectFET Power MOSFET | |
5 | IRF6611PbF |
International Rectifier |
DirectFET Power MOSFET | |
6 | IRF6611TRPbF |
International Rectifier |
DirectFET Power MOSFET | |
7 | IRF6612 |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRF6612PbF |
International Rectifier |
MOSFET | |
9 | IRF6612TR1 |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRF6613 |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRF6613PBF |
International Rectifier |
Power MOSFET | |
12 | IRF6613TRPBF |
International Rectifier |
Power MOSFET |