IRF6611TRPbF - International Rectifier

IRF6611TRPbF DirectFET Power MOSFET

The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor pha.

Features

plications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6611PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC conver.